HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0180-0300Z (Previous: ADE-208-117B) Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.
• Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc.
• Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.
Ordering Information
Type No. HZ Series
Mark Type No.
Package Code DO-35
Pin Arrangement
7 B2 1
2
Type No.
Cathode band
1. Cathode 2. Anode
Rev.3.00, Mar.11.2004, page 1 of 6
HZ Series
Absolute Maximum Ratings
Item Power dissipation Junction temperature Storage temperature
Symbol Pd Tj Tstg
Value 500 175 −55 to +175
(Ta = 25°C) Unit mW °C °C
Electrical Characteristic.
HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance .
62.5±3 3.9±0.4 HZ2A1 ... HZ36-3 (500 mW) Version 2012-11-19 Ø 1.9±0.1 Ø max 0.5 Dimensions - Maße [mm] HZ2A1 ... HZ36-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HZ12C1 |
Renesas |
Silicon Epitaxial Planar Zener Diode | |
2 | HZ12C1 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
3 | HZ12C1 |
Diotec |
Silicon Planar Zener Diodes | |
4 | HZ12C1-N |
Renesas |
Silicon Planar Zener Diode | |
5 | HZ12C2 |
Renesas |
Silicon Epitaxial Planar Zener Diode | |
6 | HZ12C2 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
7 | HZ12C2 |
Diotec |
Silicon Planar Zener Diodes | |
8 | HZ12C2-N |
Renesas |
Silicon Planar Zener Diode | |
9 | HZ12C3-N |
Renesas |
Silicon Planar Zener Diode | |
10 | HZ12CP |
Hitachi |
Silicon Epitaxial Planar Zener Diodes | |
11 | HZ12 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply | |
12 | HZ12 |
Renesas Technology |
Silicon Planar Zener Diode |