30V/130A DDDD DDDD RDS(ON)= 1.4mΩ (typ.) @ VGS = 10V RDS(ON)= 2.2mΩ (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available k (RoHS Compliant) SSSG GSSS Pin1 PDFN5*6-8L eTe HYG015N03LS1C2 Applications Battery Protection c Switching Application r Power Management for DC/DC u Single N-Channel.
oes not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). We reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr - oduct and/or to this document at any time without notice. TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 1 WEB:Http://www.ChipSourceTek.com E-mail: [email protected] [email protected] V1.0 HYG015N03LS1C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HYG013N03LS1C2 |
HUAYI |
Single N-Channel MOSFET | |
2 | HYG022N03LQ1D |
HUAYI |
N-Channel MOSFET | |
3 | HYG022N03LQ1U |
HUAYI |
N-Channel MOSFET | |
4 | HYG022N03LQ1V |
HUAYI |
N-Channel MOSFET | |
5 | HYG023N03LR1C2 |
HUAYI |
N-Channel MOSFET | |
6 | HYG023N03LR1D |
HUAYI |
N-Channel Enhancement Mode MOSFET | |
7 | HYG023N03LR1U |
HUAYI |
N-Channel Enhancement Mode MOSFET | |
8 | HYG023N03LR1V |
HUAYI |
N-Channel Enhancement Mode MOSFET | |
9 | HYG025N04LQ1D |
HUAYI |
N-Channel MOSFET | |
10 | HYG025N04LQ1U |
HUAYI |
N-Channel MOSFET | |
11 | HYG025N04LQ1V |
HUAYI |
N-Channel MOSFET | |
12 | HYG025N06LS1D |
ChipSourceTek |
N-Channel Power MOSFET |