HYB514256BJL-70 - Siemens

HYB514256BJL-70 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

DRAM (access time 50ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 55 01.95 HYB 514256B/BL/BJ/BJL-50/-60.

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery backup applications. Pin Definitions and Functions Pin No. A0-A8 RAS OE I/O1-I/O4 CAS WE Function Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) No Connection VCC VSS N.C. Semiconductor Group 56 HYB 514256B/BL/BJ/BJL-50/-60/-70 256 K × 4-DRAM Pin Configuration (top view) P-SOJ-26/20-1 P-DIP-20-2 Semiconductor Gr.