HYB3165400AJ-50 - Siemens Semiconductor Group

HYB3165400AJ-50 16M x 4-Bit Dynamic RAM

DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) Low Power DRAMs Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O4 C.

Features

8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT)
• 256 msec refresh period for L-versions
•
• Plastic Package P-SOJ-32-1 400 mil P-TSOPII-32-1 400 mil HYB 3164(5)400AJ HYB 3164(5)400AT Semiconductor Group 1 6.97 HYB3164(5)400AJ/AT(L)-40/-50/-60 16M x 4-DRAM This device is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high per.