HYB3118165BSJ-60 - Siemens Semiconductor Group

HYB3118165BSJ-60 1M x 16-Bit Dynamic RAM 1k Refresh

5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM 5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM HYB 5118165BST-50 on request HYB 5118165BST-60 on request HYB 3118165BST-50 on request HYB 3118165BST-60 on request 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM Semiconductor Group 2 1998-10-01 HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50.

Features

T-50/-60 HYB 3118165BSJ/BST-50/-60 1M × 16 EDO-DRAM The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These packages provide high system bit densities and are compatible with commonly used autom.