HYB3116160BST-60 - Siemens Semiconductor Group

HYB3116160BST-60 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Pin Names A0 to A9 A0 to A9 A0 to A11 A0 to A7 RAS OE I/O1.

Features

include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 3116160BSJ-60 HYB 3116160BSJ-70 HYB 3118160BSJ-50 HYB 3118160BSJ-60 HYB 3118160BSJ-70 HYB 3116160BST-50 HYB 3116160BST-60 HYB 3116160BST-70 HYB 3118160BST-50 HYB 3118160BST-60 HYB 3118160BST-70 Ordering Code on request on request on request on request on request on request on request on request on request on request on request on request Package P-SOJ.