The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns. The HY6264A has a data retention mode that guarantees data to remain valid at the minimum pow.
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• Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) -2.0V(min.) data retention
• Standard pin configuration -28 pin 600 mil PDIP -28 pin 330 mil SOP
Product Voltage Speed No. (V) (ns) HY6264A 5.0 70/85/100 Note 1. Current value is max.
Operation Current(mA) 50
Standby Current(uA) L LL 1mA 100 10
Temperature (°C) 0~70(Normal)
PIN CONNECTION
NC A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE CS2 A8 A9 A11 /OE A10 /CS1 I/O8 I/O7 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY6264 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
2 | HY6264-10 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
3 | HY6264-12 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
4 | HY6264-15 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
5 | HY6264-70 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
6 | HY6264-85 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
7 | HY6264A-10 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
8 | HY6264A-12 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
9 | HY6264A-15 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
10 | HY6264A-70 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
11 | HY6264A-85 |
Hynix Semiconductor |
8KX8-Bit CMOS SRAM | |
12 | HY6210 |
Hytek Microsystems |
200mA High Speed Laser Diode Driver |