DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3906 HY3906 YYÿ XXXJWW G YYÿ XXXJWW G Package Code W : TO-247-3L Date Code YYXXX WW A : TO-3P-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain mold.
• 60V/190A
RDS(ON) = 3.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching application
• Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
PB HY3906 HY3906
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code W : TO-247-3L
Date Code YYXXX WW
A : TO-3P-3L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination fin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY3906 |
HOOYI |
N-Channel MOSFET | |
2 | HY3906B |
HOOYI |
N-Channel MOSFET | |
3 | HY3907A |
HUAYI |
N-Channel Enhancement Mode MOSFET | |
4 | HY3907W |
HUAYI |
N-Channel Enhancement Mode MOSFET | |
5 | HY3003 |
HOOYI |
N-Channel MOSFET | |
6 | HY3003B |
HOOYI |
N-Channel MOSFET | |
7 | HY3003P |
HOOYI |
N-Channel MOSFET | |
8 | HY3008B |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
9 | HY3008M |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
10 | HY3008P |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
11 | HY3008PM |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
12 | HY3008PS |
HOOYI |
N-Channel Enhancement Mode MOSFET |