HY3410P/M/B/PS/PM/MF Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Curr.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY3410P |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
2 | HY3410PM |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
3 | HY3410B |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
4 | HY3410M |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
5 | HY3410MF |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
6 | HY3408 |
HOOYI |
N-Channel MOSFET | |
7 | HY3408B |
HOOYI |
N-Channel MOSFET | |
8 | HY3408M |
HOOYI |
N-Channel MOSFET | |
9 | HY3408P |
HOOYI |
N-Channel MOSFET | |
10 | HY3408PM |
HOOYI |
N-Channel MOSFET | |
11 | HY3408PS |
HOOYI |
N-Channel MOSFET | |
12 | HY3003 |
HOOYI |
N-Channel MOSFET |