HY29DS163 - Hynix Semiconductor

HY29DS163 (HY29DS162 / HY29DS163) Simultaneous Read/Write Flash Memory

The HY29DS162/HY29DS163 (HY29DS16x) is a 16 Mbit, 1.8 volt-only CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words. The device is available in 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0]. The HY29DS16x Flash memory array is organized into 39 sectors in two.

Features

n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance − 120 and 130 ns access time versions with ± 10% power supply and 30pF load Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 200 nA − Standby mode current: 200 nA − Read current: 5 mA (at.