HXY5N10MI - HuaXuanYang

HXY5N10MI N-Channel Enhancement Mode MOSFET

The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V Application Battery protection Load sw.

Features

VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack HXY5N10MI SOT23-3L Marking 1005 D S G SOT23-3L PIN1 G ! PIN2 D ! " !" " " ! PIN3 S N-Channel MOSFET Qty(PCS) 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Pulsed (Note 1) PD Maximum Power Dissipation TJ,TSTG Operating Junction and Storage Temp.