HUR820S - Sirectifier Semiconductors

HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR820S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .05.

Features

* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour APPLICATIONS
* Antiparallel diode for high frequency switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters and motor control circuits
* Rectifiers in switch mode power supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders ADVANTAGES
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
* Low IRM reduces: -.