HUR20120CT - Sirectifier Semiconductors

HUR20120CT (HUR20100CT / HUR20120CT) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode www.DataSheet4U.com HUR20100CT HUR20120CT VRSM V 1000 1200 VRRM V 1000 1200 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 .

Features

* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour APPLICATIONS
* Antiparallel diode for high frequency switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters and motor control circuits
* Rectifiers in switch mode power supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders ADVANTAGES
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
* Low IRM reduces: -.