HUFA75329G3 - Fairchild Semiconductor

HUFA75329G3 N-Channel MOSFET

HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of .

Features

• 49A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.024Ω
• Temperature Compensating PSPICE® and SABER™ Models - Available on the web at: www.fairchildsemi.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUFA75329G3 HUFA75329P3 HUFA75329S3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75329G 75329P 75329S G S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in ta.