HUF75344G3 - Fairchild Semiconductor

HUF75344G3 N-Channel MOSFET

Data Sheet HUF75344G3, HUF75344P3 October 2013 N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high e.

Features

• 75A, 55V
• Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see ou.