HSMBJ5927B - Microsemi Corporation

HSMBJ5927B SILICON 3.0W ZENER DIOCE

8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480) 941-6300 Fax (480) 947-1503 HSMBJ5913B thru HSMBJ5956B SILICON 3.0 W ZENER DIODE FEATURES: • • • • Surface mount equivalent to 1N5913B thru 1N5956B Popular HSMBJ Package outline-Small and Rugged Zener voltage 3.3V to 200V Constructed with an Oxide Passivated All Diffused Die MAXIMUM RATINGS: • • • • Junc.

Features

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• Surface mount equivalent to 1N5913B thru 1N5956B Popular HSMBJ Package outline-Small and Rugged Zener voltage 3.3V to 200V Constructed with an Oxide Passivated All Diffused Die MAXIMUM RATINGS:
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• Junction and Storage Temperature: -55°C to +150°C DC Power Dissipation 3 W at Lead Temp. TL ≤75°C Derate above +75°C: 40 mW/°C Forward voltage @ 200mA: 1.2Volts and TL = 30°C Electrical Characteristics @ TL = 30°C PART NUMBER ZENNER VOLTAGE VT (NOTE 1) Volts 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 .