HSM198S - Hitachi Semiconductor

HSM198S Silicon Schottky Barrier Diode

HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B (Z) Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high s.

Features

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• Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM198S Laser Mark C6 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM198S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average forward current Junction temperature Storage temperature Note: Two device total Symbol VR I O
* Tj Tstg Value 10 30 125
  –55 t.