HS70N06PA - HS

HS70N06PA N-CHANNEL MOSFET

The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features „ RDS(ON)=15mΩ@VGS=10V. „ Ultra low gate charge (typical 90nC) „ Low .

Features

„ RDS(ON)=15mΩ@VGS=10V. „ Ultra low gate charge (typical 90nC) „ Low reverse transfer capacitance „ Fast switching capability „ 100％ avalanche energy specified „ Improved dv/dt capability 3. Pin configuration TO-220 Pin 1 2 3 1 of 6 Function Gate Drain Source 0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 4. Absolute maximum ratings Parameter Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage Continuous drain current Drain current pulsed (note1) TJ=25 ºC TJ=100 ºC VGSS ID ID IDM ±20 70 56 280 V A A A Single pulsed avalanche energy (note2) EAS 600 mJ .