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HS0-6254RH-Q - Intersil Corporation

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HS0-6254RH-Q Radiation Hardened Ultra High Frequency NPN Transistor Array

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its.

Features


• Electrically Screened to SMD # 5962-97641
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment - Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si) - SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation
• Gain Bandwidth Product (FT) . . . . . . . . . . . . . .8GHz (Typ)
• Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ)
• Early Voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ)
• Noise Figure (50Ω) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Ty.

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