HRB0103B - Hitachi Semiconductor

HRB0103B Silicon Schottky Barrier Diode

HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ADE-208-491(Z) Rev 0 Apr. 1997 Features • Low forward voltage drop and suitable for high effifiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRB0103B Laser Mark E2 Package Cod.

Features

• Low forward voltage drop and suitable for high effifiency forward current.
• CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRB0103B Laser Mark E2 Package Code CMPAK Outline 3 2 1 1 Cathode 2 Anode 3 Cathode Anode (Top View) HRB0103B Absolute Maximum Ratings (Ta = 25°C)
*1 Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Note: Symbol VRRM I o
*2 Value 30 100
*3 Unit V mA A °C °C IFSM Tj 3 125 -55 to +150 Tst.