HMC755LP4E - Analog Devices

HMC755LP4E GaAs MMIC 1WATT POWER AMPLIFIER

The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power .

Features

High Gain: 31 dB High PAE: 28% @ +33 dBm Pout Low EVM: 2.5% @ +25 dBm Pout with 54 Mbps OFDM Signal High Output IP3: +43 dBm Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm² General Description The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is interna.