The HMC584LP5 & HMC584LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC584LP5 & HMC584LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic st.
Dual Output: Fo = 12.5 - 13.9 GHz Fo/2 = 6.25 - 6.95 GHz Pout: +10 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram 8 General Description The HMC584LP5 & HMC584LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC584LP5 & HMC584LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HMC584LP5E |
Analog Devices |
MMIC VCO | |
2 | HMC5846LS6 |
Analog Devices |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER | |
3 | HMC5805ALS6 |
Analog Devices |
GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER | |
4 | HMC5805LS6 |
Analog Devices |
GaAs pHEMT MMIC | |
5 | HMC580ST89 |
Analog Devices |
InGaP HBT GAIN BLOCK MMIC AMPLIFIER | |
6 | HMC580ST89E |
Analog Devices |
InGaP HBT GAIN BLOCK MMIC AMPLIFIER | |
7 | HMC581LP6 |
Hittite Microwave |
High IP3 RFIC Dual Downconverter | |
8 | HMC581LP6E |
Hittite Microwave |
High IP3 RFIC Dual Downconverter | |
9 | HMC582LP5 |
Analog Devices |
MMIC VCO | |
10 | HMC582LP5E |
Analog Devices |
MMIC VCO | |
11 | HMC583LP5 |
Analog Devices |
MMIC VCO | |
12 | HMC583LP5E |
Analog Devices |
MMIC VCO |