The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated po.
Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current con.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HMC326MS8G |
Analog Devices |
GaAs InGaP HBT MMIC DRIVER AMPLIFIER | |
2 | HMC320MS8G |
Analog Devices |
GaAs MMIC LOW NOISE AMPLIFIER | |
3 | HMC320MS8GE |
Analog Devices |
GaAs MMIC LOW NOISE AMPLIFIER | |
4 | HMC321ALP4E |
Analog Devices |
GaAs MMIC SP8T NON-REFLECTIVE POSITIVE CONTROL SWITCH | |
5 | HMC321LP4 |
Analog Devices |
GaAs MMIC SP8T NON-REFLECTIVE POSITIVE CONTROL SWITCH | |
6 | HMC321LP4E |
Analog Devices |
GaAs MMIC SP8T NON-REFLECTIVE POSITIVE CONTROL SWITCH | |
7 | HMC322ALP4E |
Analog Devices |
GaAs MMIC SP8T NON-REFLECTIVE SWITCH | |
8 | HMC322LP4 |
Analog Devices |
GaAs MMIC SP8T NON-REFLECTIVE SWITCH | |
9 | HMC322LP4E |
Analog Devices |
GaAs MMIC SP8T NON-REFLECTIVE SWITCH | |
10 | HMC323 |
HITTITE |
HBT DRIVER AMPLIFIER | |
11 | HMC324MS8G |
Hittite Microwave |
HBT DUAL DRIVER AMPLIFIER | |
12 | HMC327MS8G |
Analog Devices |
GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER |