HMC1099PM5E - Analog Devices

HMC1099PM5E GaN Power Amplifier

The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier that delivers 10 W (40 dBm) with up to 60% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, at an input power (PIN) of 27 dBm. The gain flatness is between 0.5 dB to 2 dB typical at small signal levels. The HMC1099PM5E is ideal for pulsed or continuou.

Features

High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies Supply voltage: VDD = 28 V at a quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP APPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification FUNCTIONAL BLOCK DIAGRAM GND.