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The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting. Features • Single 5 V supply: 5 V ± 10% • Access time: 100/120 ns (max) • .
• Single 5 V supply: 5 V ± 10%
• Access time: 100/120 ns (max)
• Power dissipation: Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz)
• Completely static memory No clock or timing strobe required
• Equal access and cycle times
• Common data input and output Three state output
• Directly TTL compatible All inputs and outputs
• Battery backup operation capability
• Operating temperature range:
–40˚C to +85˚C
HM6264BI Series
Ordering Information
Type No. HM6264BLPI-10 HM6264BLPI-12 HM6264BLFPI-10T HM6264BLFPI-12T Access time 100 ns 120 ns 100 ns 120 ns Package 600-mil, 28-pin pla.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM6264B |
Hitachi Semiconductor |
64 k SRAM (8-kword x 8-bit) |
|
| 2 | HM6264 |
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
| 3 | HM6264A |
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
| 4 | HM6264FP |
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
| 5 | HM6264LFP |
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
| 6 | HM6264LP |
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
| 7 | HM6264P |
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
| 8 | HM6268 |
Hitachi |
4096 x 4-Bit High Speed CMOS SRAM |
|
| 9 | HM6203 |
H&M semi |
High Input Voltage LDO Linear Regulators |
|
| 10 | HM6207 |
H&M semi |
ultra sensitive hall effect switch |
|
| 11 | HM6207H |
Hitachi |
256K High Speed SRAM |
|
| 12 | HM6208 |
Hitachi |
4 Bit CMOS Static RAM |
|