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HM2803D - H&M Semiconductor

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HM2803D Dual P-Channel Enhancement Mode Power MOSFET

The HM2803D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 D2 General Features ● VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V ● High power and current handing capability ● .

Features


● VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● PWM applications
● Load switch
● Power management G1 G2 S1 S2 Schematic diagram DFN 2x2 Package S1 G1 D2 Pin 1 Pin 1 Top D1 G2 S2 Bottom Package Marking and Ordering Information Device Marking Device Device Package HM2803D HM2803D DFN2X2-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS.

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