This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppli.
• 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V
• Low gate charge ( typical 70nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GD S
TO-220F
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM20N120AB |
H&M semi |
IGBT | |
2 | HM20N120T |
H&M semi |
IGBT | |
3 | HM20N120TB |
H&M semi |
IGBT | |
4 | HM20N60A |
H&M semi |
N-Channel MOSFET | |
5 | HM2007 |
HMC |
Speech recognition | |
6 | HM200WD1-100 |
BOE |
TFT LCD | |
7 | HM201C |
H&M Semiconductor |
PFM boost DC-DC converter | |
8 | HM211C |
H&M Semiconductor |
PFM boost DC-DC converter | |
9 | HM2126 |
H&M semi |
WHITE LED DRIVER | |
10 | HM215WU1-300 |
BOE |
TFT LCD | |
11 | HM215WU1-500 |
BOE |
TFT LCD | |
12 | HM215WU3-100 |
BOE |
TFT LCD |