HJR4102E - Koloona Industries

HJR4102E Sub-miniature PCB Relay

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 100A TC = 125ºC Id = 100A GATE CHARGE 10 ID = 100A VDS = 30V 8 12 RDS(on) - On-State Resistance (mΩ) 10 8 6 4 2 0 6 4 2 0 2 4 6 8 .

Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 60 44 6.9 VGS = 4.5V VGS = 10V 1.8 4.2 3.3 UNIT V nC nC mΩ mΩ V
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• 2 ORDERING INFORMATION Device CSD18532KCS Package TO-220 Plastic Package Media Tube Qty 50 Ship Tube APPLICATIONS
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• DC-DC Conversion Secondary Side Synchronous Rectifier Motor .