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HI112 - Hi-Sincerity Mocroelectronics

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HI112 NPN EPITAXIAL PLANAR TRANSISTOR

The HI112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature .. -55 ~ +150 °C Junction Temperature ....

Features

..... 100 V VEBO Emitter to Base Voltage ... 5 V IC Collector Current ..... 4 A www.DataSheet4U.com Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICBO ICEO IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*VBE(sat)
*hFE1
*hFE2
*hFE3 Cob Min. 100 100 500 1 200 Typ. Max. 10 20 2 2 3 2.8 4 12 100 Unit V V uA uA mA V V V V K pF Test Conditions IC=1mA IC=30mA VCB=80V VCE=50V VEB=5V IC=2A, IB=8mA IC.

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