HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar tr.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49171.
Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGT1S12N60B3DS |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGT1S12N60B3DS |
Intersil Corporation |
N-Channel IGBT | |
3 | HGT1S12N60A4DS |
Fairchild Semiconductor |
N-Channel IGBT | |
4 | HGT1S12N60A4DS |
Intersil Corporation |
N-Channel IGBT | |
5 | HGT1S12N60A4DS |
ON Semiconductor |
N-Channel IGBT | |
6 | HGT1S12N60A4S |
Intersil Corporation |
N-Channel IGBT | |
7 | HGT1S12N60A4S9A |
Fairchild Semiconductor |
N-Channel IGBT | |
8 | HGT1S12N60C3 |
Fairchild Semiconductor |
N-Channel IGBT | |
9 | HGT1S12N60C3DS |
Fairchild Semiconductor |
N-Channel IGBT | |
10 | HGT1S12N60C3DS |
Intersil Corporation |
N-Channel IGBT | |
11 | HGT1S12N60C3S |
Fairchild Semiconductor |
N-Channel IGBT | |
12 | HGT1S12N60C3S |
Intersil Corporation |
N-Channel IGBT |