HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applicat.
TM
(ISOLATED BASE)
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Electrically Isolated
• Ceramic Eyelets
ANODE
COMMON CATHODE
ANODE
di(rec)M/dt = 380A/µs
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HFA35HB120 |
International Rectifier |
Soft Recovery Diode | |
2 | HFA35HB60 |
International Rectifier |
Soft Recovery Diode | |
3 | HFA35HB60C |
International Rectifier |
Soft Recovery Diode | |
4 | HFA3524 |
Intersil Corporation |
2.5GHz/600MHz Dual Frequency Synthesizer | |
5 | HFA3046 |
Renesas |
Ultra High Frequency Transistor Arrays | |
6 | HFA3096 |
Renesas |
Ultra High Frequency Transistor Arrays | |
7 | HFA30PA40C |
nELL |
Ultrafast Soft Recovery Diode | |
8 | HFA30PA60C |
INCHANGE |
Ultrafast Rectifier | |
9 | HFA30PA60C |
International Rectifier |
Soft Recovery Diode | |
10 | HFA30PA60CPBF |
International Rectifier |
Ultrafast Soft Recovery Dioe | |
11 | HFA30PB120 |
International Rectifier |
SOFT RECOVERY DIODE | |
12 | HFA30TA60C |
International Rectifier |
Ultrafast/ Soft Recovery Diode |