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HFA24N50G July 2015 HFA24N50G 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 24 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lower RDS(.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
TO-247
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
G.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HFA240NJ40C |
International Rectifier |
Ultrafast/ Soft Recovery Diode |
|
| 2 | HFA240NJ40D |
International Rectifier |
Soft Recovery Diode |
|
| 3 | HFA2 |
Hongfa Technology |
SAFETY RELAY |
|
| 4 | HFA200FA120P |
Vishay Siliconix |
Ultrafast Soft Recovery Diode |
|
| 5 | HFA200MD40C |
International Rectifier |
Ultrafast/ Soft Recovery Diode |
|
| 6 | HFA200MD40C |
INCHANGE |
Soft Recovery Diode |
|
| 7 | HFA200MD40D |
IRF |
Ultrafast Soft Recovery Diode |
|
| 8 | HFA20N50U |
SemiHow |
500V N-Channel MOSFET |
|
| 9 | HFA25PB60 |
International Rectifier |
Ultrafast/ Soft Recovery Diode |
|
| 10 | HFA25PB60PBF |
International Rectifier |
soft recovery diode |
|
| 11 | HFA25TB60 |
International Rectifier |
Ultrafast/ Soft Recovery Diode |
|
| 12 | HFA25TB60S |
International Rectifier |
Soft Recovery Diode |
|