HFA08TB120 - Thinki Semiconductor

HFA08TB120 1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

HFA08TB120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Curren.

Features

A I FSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 100 A PD Power Dissipation 70 W TJ T STG Torque Junction Temperature Storage Temperature Range Module-to-Sink Recommended（M3） -40 to +150 °C -40 to +150 °C 1.1 N
·m R θJC Thermal Resistance Junction-to-Case Weight ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions I RM Reverse Leakage Current VR=1200V VR=1200V, TJ=125°C 1.8 °C /W 2.2 g TC=25°C unless otherwise specified Min. Typ. Max. Unit -- -- 100 µA -- -- 500 µA VF Forward Voltage I F =10A IF=10A, TJ=125°C -- 2.4 -- V .