HED2413 - HOTTECH

HED2413 GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE :2SD2413 FEATURES  High Collector to Base Voltage VCBO  High Collector to Emitter Voltage VCEO  Large Collector Power Dissipation PC  Low Collector to Emitter Saturation Voltage VCE(sat) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 400 Collector-Emitter Voltage VCEO 400 .

Features

 High Collector to Base Voltage VCBO
 High Collector to Emitter Voltage VCEO
 Large Collector Power Dissipation PC
 Low Collector to Emitter Saturation Voltage VCE(sat) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 400 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 100 Collector Power Dissipation PC 500 Junction Temperature TJ 150 Storage Temperature Tstg -55~150 Unit V V V mA mW °C °C HED2413(NPN) GENERAL PURPOSE TRANSISTOR SOT-89 MARKING: 1S 1:BASE 2:COLLECTOR 3:EM.