BOWEI BOWEI INTEGRATED CIRCUITS CO.,LTD. HE075 GaAs SPDT Microwave Switch Typical Performance Features ●1μm GaAs IC process ●Fast switching speed ●Standard package ●Operating temperature range:-40℃~+85℃ Specifications( measured in a 50Ωsystem TA=25℃) Parameter Symbol Unit Typical Frequency range fL~fH MHz DC~1000 RiseTime t r nS 5.0 Fall time t r n.
●1μm GaAs IC process
●Fast switching speed
●Standard package
●Operating temperature range:-40℃~+85℃
Specifications( measured in a 50Ωsystem TA=25℃)
Parameter Symbol Unit Typical
Frequency range fL~fH MHz DC~1000
RiseTime
t r nS 5.0
Fall time
t r nS 5.0
Isolation
* Iso dB 75
Insertion loss
* IL dB 1.2
*f=300MHz
Absolute Maximum Ratings
Gu a ra n te e d
Min
Max
DC
1000
-
15.0
-
15.0
70
-
-
1.8
Negative Voltage:-6V Storage Temp:+125℃
Outline Drawing
6 0
4
5
40
HEXXX
IL(dB)
Insertion Loss VS Frequency
Ta=+25℃
Ta=+85℃
1.5
Ta= -40℃
1.3
1.1
0.8
0 200 400 600 800 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HE050NA-01F-DL |
DL-SH |
Display Module | |
2 | HE080IA-06B |
INNOLUX |
LCD | |
3 | HE-1400v2 |
Digital View |
DVI INTERFACE CONTROLLER | |
4 | HE-1920v2 |
Digital View |
HD Component INTERFACE CONTROLLER | |
5 | HE127 |
Amphenol |
Connectors | |
6 | HE12F120 |
Semikron International |
High efficiency fast silicon rectifier diode | |
7 | HE12FA |
Semikron International |
(HE12FA - HE12FD) High efficiency fast silicon rectifier diode | |
8 | HE12FB |
Semikron International |
(HE12FA - HE12FD) High efficiency fast silicon rectifier diode | |
9 | HE12FD |
Semikron International |
(HE12FA - HE12FD) High efficiency fast silicon rectifier diode | |
10 | HE185WX1-100 |
BOE |
TFT LCD | |
11 | HE1AN |
Nais |
Power Relay | |
12 | HE1AN-AC120V |
Nais |
Power Relay |