HD1750FX - STMicroelectronics

HD1750FX HIGH VOLTAGE NPN POWER TRANSISTOR

The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Table 1: Order Codes Part Number HD1750FX Marking HD1750FX Packag.

Features

CES VCEO VEBO IC ICM IB IBM Ptot Vins Tstg TJ Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature o Value 1700 800 10 24 36 12 18 75 2500 -65 to 150 150 Unit V V V A A A A W V °C °C Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.67 oC/W Table 4: Electrical .