HD1530JL - ST Microelectronics

HD1530JL High Voltage NPN Power Transistor

so The device uses a Diffused Collector in Planar b technology which adopts ”Enhanced High Voltage O Structure” (EHVS1) that was developed to fit - High-Definition CRT displays. t(s) The new HD product series features improved c silicon efficiency, bringing updated performance to u Horizontal Deflection output stages. 1 TO-264 3 2 Figure 2. Internal Schem.

Features

Figure 1. Package PRELIMINARY DATA
■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1
■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS t(s)
■ LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION duc Applications ro
■ HORIZONTAL DEFLECTION OUTPUT FOR P DIGITAL TV, HDTV, AND HIGH -END te MONITORS le Description so The device uses a Diffused Collector in Planar b technology which adopts ”Enhanced High Voltage O Structure” (EHVS1) that was developed to fit - High-Definition CRT displays. t(s) The new HD product series features improved c silicon efficiency, bringing updated pe.