CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistors Spec. No. : C202S6R Issued Date : 2010.03.22 Revised Date : 2011.02.22 Page No. : 1/6 (dual transistors) HBC8471S6R Features • Two BTC2412 chips in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating i.
• Two BTC2412 chips in a SOT-363R package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Low Cob. Typ. Cob=2.0pF.
• Pb-free package.
Equivalent Circuit
HBC8471S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : 150mW per element must n.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HBC847 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
2 | HBC8472S6R |
CYStech Electronics |
NPN Transistor | |
3 | HBC846 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
4 | HBC848 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
5 | HBC807 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
6 | HBC817 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
7 | HBC856 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
8 | HBC857 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
9 | HBC858 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
10 | HBC114ES6R |
CYStech Electronics |
Dual NPN Digital Transistor | |
11 | HBC114TS6R |
CYStech Electronics |
Dual NPN Digital Transistor | |
12 | HBC114YC6 |
CYStech Electronics |
Dual NPN Digital Transistors |