HAT2099H - Renesas Technology

HAT2099H Silicon N-Channel Power MOSFET

HAT2099H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 2.9 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1187-0500 (Previous: ADE-208-1432C) Rev.5.00 Sep 07, 2005 1, 2.

Features

• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS (on) = 2.9 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1187-0500 (Previous: ADE-208-1432C) Rev.5.00 Sep 07, 2005 1, 2, 3 4 5 Source Gate Drain Rev.5.00 Sep 07, 2005 page 1 of 7 HAT2099H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage t.