HAT2031T - Hitachi Semiconductor

HAT2031T Silicon N-Channel Power MOSFET

HAT2031T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-529F (Z) 7th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2031T Absolute Maxi.

Features

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• Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP
  –8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2031T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 NoteÇR Note1 Ratings 20 ± 12 3.5 28 3.5 1 1.5 150
  – 55 to + 150 Uni.