Shantou Huashan Electronic Devices Co.,Ltd. P NP S I L I C O N T RAN S I S T O R H649A ¨€ ¨€ LOW FREQUANCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS£¨ Tstg¡ª T j¡ ª PC¡ª PC¡ª VCBO¡ª VCEO¡ ª VEBO¡ª IC¡ª Storage Temperature¡Junction Temperature¡-¡ Collector Dissipation£¨ Collector Dissipation£¨ Tc=25¡æ£© TA=25¡æ £©¡¡¡¡¡¡¡¡- ¡¡¡¡¡- Ta=25¡æ£© -55~150¡æ 150¡æ 2.
V A IC= -500mA, IB= -50mA IC= -1mA, IE=0 IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -160V, IE=0 VCE=-5V, IC=-150mA VCB=-10V,IE=0,f=1MHz Current Gain- Bandwidth Product Output Capacitance MHz pF ¨€ hFE Classification B 60¡ª 120 100¡ª C 200 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H6006 |
EM Microelectronic - MARIN SA |
Failsafe Watchdog | |
2 | H603AL |
Hi-Sincerity Mocroelectronics |
N-Channel MOSFET | |
3 | H6052 |
ETC |
3-Pin Voltage Surveillance | |
4 | H6060 |
EM Microelectronic - MARIN SA |
Self Recovering Watchdog | |
5 | H616XP |
Helios Semiconductor |
Enhanced 8-Bit DSP | |
6 | H654 |
Unisonic Technologies |
COMPLEMENTARY OUTPUT HALL EFFECT LATCH | |
7 | H669A |
huashan |
NPN Silicon Transistor | |
8 | H66T19AA |
Hi-Sincerity Mocroelectronics |
CMOS LSI | |
9 | H66T19BA |
Hi-Sincerity Mocroelectronics |
CMOS LSI | |
10 | H66T32AA |
Hi-Sincerity Mocroelectronics |
CMOS LSI | |
11 | H66T32BA |
Hi-Sincerity Mocroelectronics |
CMOS LSI | |
12 | H66T66BA |
Hi-Sincerity Mocroelectronics |
CMOS LSI |