PHASE CONTROL THYRISTOR H30TB/TLXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage voltage Repetitive peak reverse current Repetitive peak off-state current Rep. rate of change of voltage 125 125 V = VRRM V = VRRM @ 67%VDRM 125 125 125 200-1600 200-1.
tage Maximum forward gate current VD = 5V VD = 5V VD = 5V Pulse width 100μSec 25 25 25 25 100 2.50 300 200 30 12 10 mA V mA mA W V A THERMAL & MECHANICAL PARAMETERS R TH (J-C) RTH (C-HK) TJ TSTG F W Thermal impedance, 180 conduction, Sine Thermal impedance Maximum Permissible junction temperature Storage temperature range Mounting Torque Weight Junction to case Case to heatsink 0.93 0.30 125 -40 - 125 2 30 15 0 0 C/W C/W 0 0 C C NM gms For TB For TL HIND RECTIFIERS LTD 1 of 6 www.DataSheet.in PHASE CONTROL THYRISTOR H30TB/TLXX H30TLXX H30TBXX All dimensions in mm HIND RECTIFIERS LT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H30T100 |
Infineon Technologies |
IGBT | |
2 | H30T90 |
Infineon Technologies |
IGBT | |
3 | H30TBxx |
Hind Rectifiers |
PHASE CONTROL THYRISTOR | |
4 | H3080A-NDOFB87 |
Hantouch |
Touch-Panel | |
5 | H30D05 |
Mospec Semiconductor |
HIGH-EFFICIENCY RECTIFIERS | |
6 | H30D05C |
Won-Top Electronics |
(H30D05C - H30D60C) 30A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER | |
7 | H30D10 |
Mospec Semiconductor |
HIGH-EFFICIENCY RECTIFIERS | |
8 | H30D10C |
Won-Top Electronics |
(H30D05C - H30D60C) 30A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER | |
9 | H30D15 |
Mospec Semiconductor |
HIGH-EFFICIENCY RECTIFIERS | |
10 | H30D15C |
Won-Top Electronics |
(H30D05C - H30D60C) 30A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER | |
11 | H30D20 |
Mospec Semiconductor |
HIGH-EFFICIENCY RECTIFIERS | |
12 | H30D20C |
Won-Top Electronics |
(H30D05C - H30D60C) 30A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER |