The product part NO.H27UCG8T2YR-BC is a single 3.3V 64Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 2,048 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes. The pages are subdivided into an 8,192-byte main data storage area with a spare 448-byte district. Page program op.
(8,192+448 bytes) - Block size : 256 pages(2M+112K bytes) - Plane size : 2,048 blocks - Chip size : 2 planes (4,096 blocks) Supply Voltage
- 3.3V device : Vcc = 2.7 V ~ 3.6 V
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Operating Temperature: - 0°C to +70°C (Commercial) - -25°C to +85°C (Extended) - -40°C to +85°C (Industrial)
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Read Time - Random Access (tR): 200 ㎲ (Max.) - Sequential Access : 20 ㎱ (Min.) Write Time
- Page program : 1600 ㎲ (Typ.) - Block erase : 3.5 ㎳ (Typ.)
http://www.DataSheet4U.net/
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Rev 1.0 / Aug. 2010
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datasheet pdf - http://www.DataSheet4U.net/
H27UCG8T2M Series 64Gb (8192M x 8bit) NAND Flash
1. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H27UCG8T2M |
Hynix |
64Gb (8192M x 8bit) NAND Flash | |
2 | H27UCG8T2ATR-BC |
Hynix |
64Gb(8192M x 8bit) Legacy MLC NAND Flash | |
3 | H27UCG8T2BTR-BC |
Hynix |
F20 64Gb MLC NAND Flash Memory | |
4 | H27UCG8T2BYR-BC |
Hynix |
64Gb(8192M x 8bit) MLC NAND Flash | |
5 | H27UCG8T2ETR-BC |
Hynix |
NAND Flash | |
6 | H27UCG8U5BTR-BC |
Hynix |
32Gb(4096M x 8bit) Legacy MLC NAND Flash | |
7 | H27U1G8F2B |
Hynix |
1 Gbit (128 M x 8 bit) NAND Flash | |
8 | H27U2G6F2C |
Hynix |
2Gb NAND FLASH | |
9 | H27U2G8F2C |
Hynix |
2Gb NAND FLASH | |
10 | H27U2G8F2CTR |
Hynix |
2Gb NAND FLASH | |
11 | H27U4G6F2D |
Hynix |
4 Gbit (512M x 8 bit) NAND Flash | |
12 | H27U4G8F2D |
Hynix |
4 Gbit (512M x 8 bit) NAND Flash |