The H22B1, H22B2 and H22B3 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaq.
• Opaque housing
• Low cost
• .035" apertures
• High IC(ON)
© 2002 Fairchild Semiconductor Corporation
Page 1 of 6
6/13/02
PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH
H22B1 H22B2 H22B3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3 and 4) Soldering Temperature INPUT (EMITTER) Continuous Forward Current Reverse Voltage Power Dissipation(1) OUTPUT (SENSOR) Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation (TC = 25°C)(1) VCEO VECO IC PD 30 6 40 150 V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H22B1 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH | |
2 | H22B1 |
Fairchild Semiconductor |
PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH | |
3 | H22B3 |
Fairchild Semiconductor |
PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH | |
4 | H22B3 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH | |
5 | H22B4 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH | |
6 | H22B4 |
Fairchild Semiconductor |
PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH | |
7 | H22B5 |
Fairchild Semiconductor |
PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH | |
8 | H22B5 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH | |
9 | H22B6 |
Fairchild Semiconductor |
PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH | |
10 | H22B6 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH | |
11 | H22A |
Fairchild Semiconductor |
SLOTTED OPTICAL SWITCH | |
12 | H22A1 |
QT Optoelectronics |
SLOTTED OPTICAL SWITCH |