IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages ® • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT t.
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages ®
• TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) www.DataSheet4U.com
• Low EMI 1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:
• Inductive C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H20R120 |
Infineon Technologies |
IHW15N120R | |
2 | H20R1202 |
Infineon Technologies |
Reverse Conducting IGBT | |
3 | H20R1203 |
Infineon |
Reverse conducting IGBT | |
4 | H20R1353 |
Infineon |
Reverse conducting IGBT | |
5 | H2000CHXX |
Hind Rectifiers Limited |
PHASE CONTROL THYRISTOR | |
6 | H2008NL |
Pulse Engineering |
Power Over Ethernet Magnetics | |
7 | H2017NL |
Pulse Engineering |
Power Over Ethernet Magnetics | |
8 | H2019NL |
Pulse Engineering |
Power Over Ethernet Magnetics | |
9 | H20201DL |
FPE |
10/100 Base-T Transformer | |
10 | H20201DL |
M-TEK |
10/100 Base-T Transformer | |
11 | H20201DL-R |
FPE |
10/100 Base-T Transformer | |
12 | H20202DL |
FPE |
10/100 Base-T Transformer |