Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s D.
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(
•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC
Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(
•) Pulse width limited by safe operating area
November 1996
TO-247
3 2 1
TO-218
33
22
1
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Val ue
STH/STW15NA50 STH15NA50FI
500
500
± 30
14.6
9.3
9.2 5.5
58.4
58.4
190 80
1. 52
0. 64
4000
-65 to 150
150
Unit
V V V A A A W W/oC V oC oC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H15NB50FI |
ST Microelectronics |
STH15NB50FI |
|
| 2 | H151250G |
Eaton |
HEADER CONNECTOR |
|
| 3 | H15234 |
ETC |
EASTMAN Fine Grain Duplicating Panchromatic Negative Film 2234/ 3234/ 5234/ 7234 |
|
| 4 | H1563P |
Hi-Sincerity Mocroelectronics |
HIGH-EFFICIENCY DC/DC CONVERTER |
|
| 5 | H1563S |
Hi-Sincerity Mocroelectronics |
HIGH-EFFICIENCY DC/DC CONVERTER |
|
| 6 | H15R1202 |
Infineon |
Reverse Conducting IGBT |
|
| 7 | H15R1203 |
Infineon Technologies |
Reverse conducting IGBT |
|
| 8 | H1008 |
Huashan |
NPN SILICON TRANSISTOR |
|
| 9 | H100F24-2-C |
ETC |
Relay |
|
| 10 | H1012 |
Pulse |
10/100 BASE-T SINGLE PORT TRANSFORMER MODULES |
|
| 11 | H1012NL |
Pulse |
10/100 Base-T Single Port Transformer Modules |
|
| 12 | H1013 |
Pulse |
10/100BASE-TX SINGLE PORT TRANSFORMER MODULES |
|