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H11D4 - Fairchild Semiconductor

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H11D4 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. H11D1 H11D2 H11D3 H11D4 4N38 FEATURES • High Voltage - H.

Features


• High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V
• High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 6 BASE APPLICATIONS




• Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER
*Forward DC C.

The same part from a different manufacturer

Datasheet H11D4 - Vishay Siliconix H11D4

The H11D1/H11D2/H11D3/H11D4 are optocouplers with very high BVCER. They are intended for telecommunications applications.

Datasheet H11D4 - ISOCOM COMPONENTS H11D4

The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor.

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