H11B1 - Motorola Inc

H11B1 6-Pin DIP Optoisolators Darlington Output(Low Input Current)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11B1/D GlobalOptoisolator™ H11B1 * [CTR = 500% Min] 6-Pin DIP Optoisolators Darlington Output (Low Input Current) The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in .

Features

Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT DETECTOR Collector
  –Emitter Voltage Emitter
  –Base Voltage Collector
  –Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) VISO PD TA Tstg 7500 250 2.94
  – 55 to +100
  – 55 to +150 Vac(pk) mW mW/°C °C °C VCEO VEBO VCBO IC .