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The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a themally-enhanced package with earless flange. GTRA364002FC Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDM.
input matching, high efficency, and a themally-enhanced package with earless flange.
GTRA364002FC Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 220 mA, VGS(PEAK) = -5.8 V,
ƒ = 3600 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
60
Efficiency
20
40
16
20
Gain
12
0
8
PAR @ 0.01% CCDF
-20
4
-40
0 25
gtra364002fc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
• GaN on SiC HEMT technology
• Input matched
• Asymmetrical Doherty design - Main: P3dB = 170 W Typ - Peak: P3dB = 230 W Typ
• .
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