GSBAS70S - GTM

GSBAS70S SURFACE MOUNT SCHOTTKY BARRIER DIODE

ISSUED DATE :2005/12/29 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A These Schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package i.

Features

er Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise noted) Min. 70 Typ. Max. 410 750 1000 100 10 2.0 5.0 nA uA pF ns mV Unit V IR=10 A IF1=1mA IF1=10mA IF2=15mA VR1=50V VR2=70V VR=0V, f=1MHz IF=IR=10mA, RL =100 , Irr=1mA Test Conditions Reverse Leakage Current Total Capacitance Reverse Recover Time IR CT Trr GSAS70/A/C/S Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/12/29 REVISED.